BC550B NPN Silicon Transistor

BC550B is a Silicon Epitaxial NPN General Purpose Transistor in a TO92 package.

FEATURES
· Low current (max. 100 mA)
· Low voltage (max. 50 V)
· Low Noise(NF1 200mA,5Vdc, Rs = 2.0 k, f = 1.0 kHz)

APPLICATIONS
· General purpose switching and amplification.

Absolute Maximum ratings:
Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50V
Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5V
Continuous Collector Current, Ic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100mA
DC Current Gain hFE VCE =5VDC, IC= -2mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900(max)
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above 25° . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28.6mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65° to +200°C

This is a full specification device, with very low leakage and good gain. It is fully tested
and is supplied with a technical data sheet and pin-out guide.