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Passive сomponents
A range of high quality glass tube, fast acting (Quick Blow) fuses with nickel-finish brass end caps, overall size 31.8 x 6.35mm (1¼in x ¼in.) diameter. Designed to IEC127. Rated at 60Vac. Supplied in packs of 2
Price: £1.25 Buy!
valley-electronics.co.uk
Passive сomponents
High Speed Ceramic (ultra-fast acting) fuse with nickel-finish brass end caps. Overall size 31.8 x 6.35mm (1¼in x ¼in.) Designed to IEC127 with SEMKO, UL, BSI and VDE approvals. Rated at 250Vac with an inrush breaking capacity >20A or 10 times the rated current, whichever is greater.
Price: £1.68 Buy!
Semiconductors
Pack of 5 (Five) 1N4001 Silicon Rectifier Diodes The 1N4001 is a general purpose plastic encapsulated silicon rectifier. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. Maximum continuous ratings. V RRM (repetitive peak reverse voltage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V V R (continuous reverse voltage) . . . . . . . . . . . . . . . . . . ...
Price: £0.41 Buy!
Semiconductors
Pack of 5 (Five) 1N4004 Silicon Rectifier Diodes The 1N4004 is a general purpose plastic encapsulated silicon rectifier. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. Maximum continuous ratings. V RRM (repetitive peak reverse voltage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V V R (continuous reverse voltage) . . . . . . . . . . . . . . . . . . ...
Price: £0.49 Buy!
Semiconductors
Pack of 4 (Four) 1N4007 Silicon Rectifier Diodes The 1N4007 is a general purpose plastic encapsulated silicon rectifier. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. Maximum continuous ratings. V RRM (repetitive peak reverse voltage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V V R (continuous reverse voltage) . . . . . . . . . . . . . . . . . . ...
Price: £0.48 Buy!
Semiconductors
Pack of 5(Five) 1N4148 Silicon Signal Diodes General purpose small signal, fast switching speed. Silicon epitaxial planar construction Supplied in a DO-35 style case
Price: £0.40 Buy!
Semiconductors
Pack of 4 (Four) 1N5401 3.0 Amp 100V General Purpose Rectifier Diodes The 1N5401 is a general purpose 3Amp plastic encapsulated silicon rectifier. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. Maximum continuous ratings. V RRM (repetitive peak reverse voltage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100V V R (continuous reverse voltage) . . . . . ...
Price: £0.54 Buy!
Semiconductors
Pack of 4 (Four) 1N5404 3.0 Amp 400V General Purpose Rectifier Diodes The 1N5404 is a general purpose 3Amp plastic encapsulated silicon rectifier. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. Maximum continuous ratings. V RRM (repetitive peak reverse voltage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V V R (continuous reverse voltage) . . . . . ...
Price: £0.55 Buy!
Semiconductors
Pack of 4 (Four) 1N5408 3.0 Amp 1000V General Purpose Rectifier Diodes The 1N5408 is a general purpose 3Amp 1000v plastic encapsulated silicon rectifier. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. Maximum continuous ratings. V RRM (repetitive peak reverse voltage) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V V R (continuous reverse voltage) . . ...
Price: £0.56 Buy!
Semiconductors
Pack of 5 (Five) 1N914 Silicon Signal Diode The 1N914 is a high-speed switching diode fabricated in planar technology, and encapsulated in a hermetically sealed leaded glass SOD27 (DO-35) package.
Price: £0.40 Buy!
Passive сomponents
A range of high quality glass tube, fast acting (Quick Blow) fuses with nickel-finish brass end caps, overall size 31.8 x 6.35mm (1¼in x ¼in.) diameter. Designed to IEC127. Rated at 60Vac. Supplied in packs of 2
Price: £1.25 Buy!
Passive сomponents
Pack of 2 (Two) high quality glass tube, time-delay acting (Slow-Blow/Anti-Surge)fuses with nickel-finish brass end caps. Overall size 20 x 5mm diameter. Recommended where high start currents or surge currents are expected. Designed to IEC127 with SEMKO, UL, BSI and VDE approvals. Rated at 250Vac with a breaking capacity of 35A or 10x rated current, whichever is greater.
Price: £0.89 Buy!
Passive сomponents
Pack of 2 (Two) high quality glass tube,Quick Blow (fast acting) fuses with nickel-finish brass end caps. Overall size 20 x 5mm diameter. Designed to IEC127 with SEMKO, UL, BSI and VDE approvals. Rated at 250Vac with a breaking capacity of 35A or 10 times the rated current, whichever is greater. RoHS Approved
Price: £0.89 Buy!
Passive сomponents
High Speed Ceramic (ultra-fast acting) fuse with nickel-finish brass end caps. Overall size 20 x 5mm diameter. Designed to IEC127 with SEMKO, UL, BSI and VDE approvals. Rated at 250Vac with an inrush breaking capacity of 25A or 10 times the rated current, whichever is greater.
Price: £1.68 Buy!
Semiconductors
**Sold seperately**(image shows two) 2N1131 NPN Silicon Audio Output, Video, Driver Transistor. Description: 2N1131 are NPN silicon transistors in a TO39/TO5 type package designed primarily for amplifier and switching applications. These devices features high breakdown voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range. Absolute Maximum Ratings: Collector-Emitter ...
Price: £1.89 Buy!
Semiconductors
2N3055 NPN Silicon Power Transistor Discription The 2N3055 (NPN) is a silicon transistor in a TO3 type case designed for general purpose switching and amplifier applications. Features: DC Current Gain: hFE = 20 - 70 @ IC = 4A Collector-Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A Excellent Safe Operating Area Absolute Maximum Ratings: Collector-Emitter Voltage, VCEo. . . . . . . . . . ...
Price: £1.05 Buy!
Semiconductors
2N3442 NPN Silicon Transistor Discription The 2N3443 NPN is a complementary silicon power transistors in a TO3 type package designed for high power audio, disc head positioners, and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-to-DC converters or inverters. Features High Safe Operating Area: 1.2A @ 100V Completely Characterized ...
Price: £1.49 Buy!
Semiconductors
2N3704 NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. VCEO Collector-Emitter Voltage. . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .30 V VCBO Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .50 V VEBO Emitter-Base Voltage . . . . . . . . . . . . . . . ...
Price: £0.22 Buy!
Semiconductors
2N3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. VCEO Collector-Emitter Voltage. . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . .40 V VCBO Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 V VEBO Emitter-Base ...
Price: £0.21 Buy!
Semiconductors
2N5060 Silicon Controlled Rectifier, [SCR] 800 mA, 30 V Sensitive Gate Silicon Controlled Rectifier. Reverse Blocking Thyristor Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a plastic TO−92 package. Features Sensitive Gate Trigger Current − ...
Price: £0.55 Buy!
Semiconductors
2N6609 PNP High Power Transistor The 2N6609 are high power transistors designed for high power audio, disc head positioners and other linear power control applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters.(160v @16A Nominal) Features High Safe Operating Area (100% Tested) 150 W @ 160V Completely Characterized for ...
Price: £3.99 Buy!
Semiconductors
2SA1102 NPN Silicon AF High Current Power Amplifier/High Power Switching Transistor The 2SA1102 (NPN) is a silicon transistor in a TO3P type case designed for AF power amplifier and high current switching applications. They are especially designed for series and shunt regulators and as a driver and output stage of High Quality Audio Amplifiers. This is a full specification device, with very low leakage and good gain. ...
Price: £5.89 Buy!
Semiconductors
2SA636 General-Purpose PNP Medium-Power silicon Transistor. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector-Emitter Voltage, VCEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V ...
Price: £4.65 Buy!
Semiconductors
**SOLD SEPERATELY** (image shows 2) 2SA671 General Purpose PNP Silicon Power Output Transistor. The 2SA671 is a General purpose PNP Silicon Power Output Transistor in a TO220 type package designed for switching and amplifier applications. They are especially designed for series and shunt regulators and as a driver and output stage of High Quality Audio Amplifiers. This is a full specification device, with very ...
Price: £4.88 Buy!
Semiconductors
2SA715 PNP Silicon Audio Amplifier, Driver Transistor Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector-Emitter Voltage, VCEO. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter-Base ...
Price: £3.98 Buy!
Semiconductors
2SB1143 PNP Silicon Switching Transistor 2SB1143 PNP High Current Silicon Switching Transistor Features: Low Saturation Voltage High Current Capacity and Wide ASO Applications: Voltage Regulators Relay Drivers Lamp Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Price: £3.99 Buy!
Semiconductors
2SB775 PNP Silicon AF High Current Power Amplifier/ High Power Switching Transistor The 2SB775 (PNP) is a silicon transistor in a TO3P type case designed for AF power amplifier and high current switching applications. They are especially designed for series and shunt regulators and as a driver and output stage of High Quality Audio Amplifiers. This is a full specification device, with very low leakage and good ...
Price: £5.85 Buy!
Semiconductors
2SB834 (PNP) Silicon Audio Power Output and Medium Power Switching Transistor. Description: The 2SB834 (PNP) is a silicon transistor in a TO220 type package designed for use in general purpose amplifier and switching applications. Features: DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A Collector-Emitter Sustaining Voltage: VCEO(sus) = 70V Min High Current-Gain Bandwidth Product:fT=10MHz ...
Price: £4.99 Buy!
Semiconductors
2SC1061 NPN High Current Power Transistor The 2SC1061 is an NPN silicon transistor in a standard TO220 type package designed for general purpose high power switching and amplifier applications.
Price: £3.96 Buy!